Solid State Devices

71. Defined as random motion of holes and free electrons due to thermal agitation

1. Fission
2. Fusion
3. Diffusion
4. Ionization

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72. Depletion-mode MOSFET acts mostly as

1. A JFET
2. A voltage source
3. A resistor
4. Enhancement-mode MOSFET

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73. Diffusion or storage capacitance is the term used to refer to

1. The reverse bias capacitance of a diode
2. The forward bias capacitance of a diode
3. The breakdown capacitance of a zener diode
4. The effective capacitance of the rectifier

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74. Diode that operates in the reverse breakdown voltage and is used as a voltage regulator.

1. Varactor diode
2. PIN diode
3. Tunnel diode
4. Zener diode

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75. Each atom in the silicon crystal has how many electrons in its valence orbit?

1. 8
2. 32
3. 2
4. 4

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76. Each pair of positive and negative ions at the junction is called a/an

1. Anion
2. Positron
3. Cation
4. Dipole

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77. Eg for silicon is 1.12 eV and germanium is 0.72 eV. It can be concluded that

1. Less number of electron hole pairs will be generated in silicon than in germanium at room temperature
2. More number of electrons and hole pairs will be generated in silicon than in germanium at room temperature
3. High energy of charges is a property of silicon
4. The relationship of the two is not significant

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78. Electron emitted by the mechanical impact of an ion striking a surface is called

1. Primary electrons
2. Secondary electrons
3. Moderately doped electrons
4. Polarized charge

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79. Electron mobility property of silicon at 300 K is approximately equal to _________m∧2/V-s

1. 1.1
2. 0.135
3. 0.048
4. 45

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80. Equivalent of transistor at saturation in JFETs is _________?

1. Breakdown
2. Constant-current
3. Pinch-off
4. Ohmic

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