261. When both emitter and collector junctions are reverse biased, the transistor is said to be at _________ region.
Correct answer: (B)
Cut-off
262. When charges are forced to move by the electric field of a potential difference, _________ current is said to flow.
Correct answer: (B)
Drift
263. When doping increases, _________ of a semiconductor decreases.
Correct answer: (C)
Bulk resistance
264. When PN junction is connected to a battery in such a way that P-side is connected to negative terminal of the battery and positive terminal to N-side, this connections is known as
Correct answer: (B)
Reverse bias
265. When PN junction is connected to a battery in such a way that P-side is connected to positive terminal of the battery and negative terminal to N-side, this connections is known as
Correct answer: (A)
Forward bias
266. When temperature increases, barrier potential _________
Correct answer: (B)
Decreases
267. When temperature of a pure semiconductor is increased, its resistance
Correct answer: (A)
Decreases
268. When the collector current Ic is plotted against the collector base voltage at constant emitter Ie, the curve obtain is called
Correct answer: (A)
Output characteristic curve
269. When the electron transmit time through the base region is very short, this
Correct answer: (C)
Provides higher cut-off frequency
270. When the emitter junction is forward biased while the collector junction is reverse biased, the transistor is at _________ region.
Correct answer: (C)
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