Solid State Devices

141. The electrons in the largest orbit travel_________than the electrons in the smaller orbits.

1. More slowly
2. Faster
3. In the same velocity
4. A little bit slower

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142. The energy gap for germanium made semiconductor is

1. Eg = 5 eV
2. Eg = 1.1 eV
3. Eg = 0.67 eV
4. No energy gap

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143. The energy gap for semiconductors made of silicon is

1. Eg = 5 eV
2. Eg = 1.1 eV
3. Eg = 0.67 eV
4. Eg = 4 eV

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144. The equation for JFET's transconductance.

1. gm = AIc/AVGS
2. gm = IG/VG
3. gm = VGS/Ic
4. gm = Ic/VDS

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145. The forward resistance crystal diode is in the order of

1. Ω
2. mΩ
3. µΩ
4. kΩ

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146. The frequency of a half-wave signal is

1. Twice the line frequency
2. Equal to the line frequency
3. One-half of the line frequency
4. One-fourth the line frequency

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147. The gate-to0source on voltage if an n-channel enhancement mode MOSFET is

1. Less than Vth
2. Equal to Vgs(off)
3. Greater than VDS(on)
4. Greater than VGS(th)

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148. The highest energy band of an atom which can be filled with electrons.

1. Valence band
2. Conduction band
3. Insulation band
4. Energy level

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149. The holding of one extreme amplitude of the input waveform to a certain amount of potential is called

1. Slicing
2. Limiting
3. Rectifying
4. Clamping

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150. The maximum forward current in a junction diode is limited by its

1. Peak inverse voltage
2. Maximum forward voltage
3. Leakage current
4. Junction temperature

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